NXP Semiconductors
100W RF Power LDMOS Transistor
Discover the NXP Semiconductors MRF101AN, a 100W RF Power LDMOS Transistor built for demanding RF power amplification tasks. This transistor delivers high performance up to 250 MHz with exceptional ruggedness and efficiency. It's ideal for various communication systems, including VHF/UHF, broadcast, and industrial applications, offering a typical gain of 23 dB. Encased in a TO-220-3L package, the MRF101AN ensures reliable operation in challenging environments, providing consistent performance where it's needed most.
$28.41
Owner Satisfaction
4.5
/ 5
Category Rank
363
/ 651
#363 in Transistors
Price vs Category Average
-62%
Below average
Technology
LDMOS
/ LDMOS
Who it's for
- High Power-Added Efficiency (PAE)
- Excellent Signal Linearity
- High VSWR Ruggedness
Who should skip it
- Limited High-Frequency Performance
- Significant Thermal Dissipation Needs
- Sensitivity to Biasing and Matching
Key Specs
Technology
LDMOS
Maximum Frequency
250 MHz
Output Power (Pout)
100 W
Gain
23 dB
Supply Voltage
50 V
Efficiency
79.5 %
Package Name
TO-220-3L
Thermal Resistance
1.1 °C/W
Features
- Exceptional ruggedness for demanding use
- High performance up to 250 MHz
- Designed for RF power amplification
- High efficiency operation
- Robust LDMOS technology
- Suitable for diverse communication systems
- Reliable in challenging environments
What customers say
Professional engineers and advanced radio users highly value the NXP 100W LDMOS Transistor for its superior performance and reliability. The component earns praise for exceptional linearity and high power gain, making it ideal for clean signal transmission in broadcast and specialized communications. Users consistently note its robust thermal stability and high efficiency, confirming it meets demanding specifications. Although the initial cost is high, the consensus is that its long term dependability justifies the investment for mission critical applications. Feedback suggests that proper handling and thermal management are essential for optimal operation. Overall, this transistor is recognized as a high quality, dependable workhorse in high power RF solutions.
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