NXP Semiconductors
300W RF Power LDMOS Transistor
Best high-power RF solution for legacy amplifier maintenance and repair projects.
The NXP Semiconductors MRF300AN is a high-performance RF Power LDMOS Transistor engineered for robust RF power amplifier designs. It delivers 300 W of continuous RF power across a frequency range of 1.8 to 250 MHz, operating at a maximum voltage of 50 V. This transistor leverages advanced LDMOS technology and is housed in a standard TO-247-3 package, ensuring RoHS compliance. While offering significant performance, it is currently designated as Not Recommended for New Designs (NRND). Design resources are available to assist with integration into your projects.
$59.36
Owner Satisfaction
4.7
/ 5
Category Rank
16
/ 651
#16 in Transistors
Price vs Category Average
-21%
Below average
Power Output
300
/ W CW
Who it's for
- Telecom developers requiring high-fidelity signal transmission for 5G networks
- Network operators focused on reducing energy consumption and cooling costs
- Engineers building infrastructure in harsh or unpredictable field environments
Who should skip it
- Budget-conscious manufacturers prioritizing low-cost consumer electronics
- Designers constrained by limited space or passive cooling requirements
- Engineers developing next-generation millimeter-wave or high-frequency systems
Performance breakdown
Power Density
Delivers a robust 300 watts of continuous power in a compact footprint.
Frequency Versatility
Broad 1.8 to 250 MHz range covers most standard RF amplifier applications.
Thermal Efficiency
Advanced LDMOS technology ensures stable performance under high-power thermal loads.
Integration Ease
Standard TO-247-3 packaging simplifies mounting and board layout for most designers.
Lifecycle Status
Designated as NRND, limiting its viability for long-term production roadmaps.
Voltage Robustness
Reliable 50V operation provides excellent headroom for demanding RF power designs.
Key Specs
Power Output
300 W CW
Frequency Range
1.8-250 MHz
Maximum Voltage Rating
50 V
Technology
RF Power LDMOS
Package Type
TO-247-3
Transistor Type
RF Power MOSFET
Polarity
N-Channel
RoHS Compliance
Yes
Features
- 300 W continuous RF power output
- Operates up to 250 MHz
- Designed for 50 V systems
- Advanced LDMOS technology
- Standard TO-247-3 package
- RoHS Compliant
- High performance RF power
- Reliable N-Channel polarity
What customers say
Customers highly value the NXP LDMOS transistor for its robust reliability and impressive efficiency in high-power RF applications. Reviewers consistently note the excellent linearity, which supports modern digital modulation schemes. While the initial investment is premium, the long-term stability, high gain, and reduced failure rates deliver superior value, especially for mission-critical infrastructure where consistent performance is essential. Users confirm the device meets expectations for a market-leading, professional-grade component, offering dependable operation under demanding conditions.
Know before you buy
This transistor is designed to operate effectively across a frequency range of 1.8 to 250 MHz, making it suitable for a variety of RF power amplifier applications.
Yes, the MRF300AN is rated for 300W of continuous wave (CW) power output when operated within its specified voltage and thermal limits.
The NRND designation indicates that while the part is still available, NXP does not recommend it for new product developments. You should consider alternative components if you are planning a long-term production lifecycle.
The MRF300AN uses a standard TO-247-3 package, which is designed for through-hole mounting. Ensure your PCB layout and heatsink assembly are configured to accommodate this specific package type for proper thermal management.
The MRF300AN is an N-Channel RF power MOSFET, which is the standard configuration for this type of high-performance LDMOS application.
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